[17a-K301-1~10] 13.7 Compound and power devices, process technology and characterization

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[17a-K301-5] Thermal generation rate of hole traps at SiO₂/p-GaN MOS interfaces

〇Masahiro Hara¹, Kenji Hirahara¹, Mikito Nozaki¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:

GaN,MOS structure,Hole trap