[17a-K301-1~10] 13.7 Compound and power devices, process technology and characterization

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-K301-9] Reversibility of Forward Current Stress Degradation in GaN p-n Diodes

〇Daiki Iwata¹, Hiroshi Ohta², Yoshinobu Narita¹, Takashi Sato¹, Fumimasa Horikiri¹, Tomoyoshi Mishima², Takeshi Tanaka¹, Kiyotoshi Iimura¹, Hajime Fujikura¹ (1.Sumitomo Chemical, 2.Housei Univ.)

Keywords:

Gallimu Nitride,p-n diode