[17a-K304-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K304-3] Pressure change in High-Rate filtered arc deposition system for AlCrN film

〇Mirano Oneda¹, Seiya Watanabe¹, Genki Sano¹, Shogo Ochi¹, Haru Sano¹, Hirofumi Takikawa¹, Hiroaki Sugita², Takahiro Hattori², Hiroki Gima² (1.Toyohashi Univ. Technol., 2.OSG Co., Ltd.)

Keywords:

Pressure control,AlCrN,vacuum arc deposition

In order to fabricate droplet-free AlCrN films, it is necessary to select an appropriate pressure range (pressure setting and gas flow rate during gas introduction) during deposition.
In this study, we conducted discharge tests simulating the deposition of AlCrN films to investigate pressure changes before and after discharge, and confirmed the conditions under which discharge is stable at constant pressure, conditions under which discharge is stable despite a decrease in pressure, and conditions under which discharge is unstable due to a decrease in pressure.