The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation8 Plasma Electronics : 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[17a-K304-1~10]8.2 Plasma deposition of thin film, plasma etching and surface treatment

Mon. Mar 17, 2025 9:00 AM - 12:00 PM JST
Mon. Mar 17, 2025 12:00 AM - 3:00 AM UTC
K304 (Lecture Hall Bldg.)
Takeshi Kitajima(National Defence Academy), Toru Harigai(Gifu Univ.)
PR
SonySemiconductor
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[17a-K304-1]Effect of Treatment by Atmospheric Pressure Non-equilibrium Plasma Jet on Adhesive Bonding of Metals and Polymer Materials

〇Kosuke Takenaka1, Ryosuke Koyari1, Shunsho Shigemori1, Susumu Toko1, Giichiro Uchida2, Yuichi Setsuhara1 (1.Osaka Univ., 2.Meijo Univ.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[17a-K304-2]Nanoporous Silicon Thin Film via Plasma Co-Deposition Process for Lithium-Ion Battery Applications

〇Shin Kajita1, Giichiro Uchida2, Hirohiko Tanaka3, Kiho Tabata3, Yuta Yamamoto3, Noriyasu Ohno3 (1.Univ. of Tokyo, 2.Meijo Univ., 3.Nagoya Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K304-3]Pressure change in High-Rate filtered arc deposition system for AlCrN film

〇Mirano Oneda1, Seiya Watanabe1, Genki Sano1, Shogo Ochi1, Haru Sano1, Hirofumi Takikawa1, Hiroaki Sugita2, Takahiro Hattori2, Hiroki Gima2 (1.Toyohashi Univ. Technol., 2.OSG Co., Ltd.)
Comment()
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[17a-K304-4]Study of forming Zinc Oxide films treated by plasma CVD process for improving the UV resistance of Polycarbonate resin

〇HIROHARU KOJIMA1 (1.Hiroshima Pref. Tech. Res. Inst.)
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10:00 AM - 10:30 AM JST(1:00 AM - 1:30 AM UTC)

[17a-K304-5][The 46th Paper Award Speech] Prediction of coverage and film properties on large-scale pattern for deposition process

〇Nobuyuki Kuboi1, Hiroyasu Matsugai1, Tetsuya Tatsumi1, Shoji Kobayashi1, Yoshiya Hagimoto1, Hayato Iwamoto1 (1.Sony Semiconductor Solutions Corporation)
Comment()
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[17a-K304-6]Electric and dissociation properties of 1-C4F8 obtained by using computational chemistry

〇Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-K304-7]Electronic properties and dissociation channels of 1-C5F10 molecule

〇Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-K304-8]Plasma-induced defects ~ SiO2/Si interface defects and microstructural change~

〇Shota Nunomura1, Takayoshi Tsutsumi2, Masaru Hori2 (1.AIST, 2.Nagoya Univ.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-K304-9]A Cyclic Etching of Platinum Thin Films by An Oxygen Plasma and A Formic Acid Vapor Treatment

〇Kazuhiro Miwa1, T.T. Nga Nguyen1, Daijiro Akagi2, Takeshi Tomizawa2, Masaru Hori1, Kenji Ishikawa1 (1.Nagoya Univ., 2.AGC Inc.)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K304-10]In-situ Surface Reaction Analysis during Atomic Layer Etching of TiN Irradiated by Cl Radicals at Low Temperature

〇(M1)Shunya Hirai1, Kazunori Shinoda2, Thi-Thuy-Nga Nguyen1, Takayoshi Tsutsumi1, Kenichi Inoue1, Kenji Ishikawa1 (1.Nagoya Univ., 2.Hitachi High-tech Corp.)
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