[17a-K304-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[17a-K304-6] Electric and dissociation properties of 1-C4F8 obtained by using computational chemistry

〇Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori

Keywords:

1-C4F8,Etching gas,Primarily dissociation process

We are studying primarily dissociation routs of 1-C₄F₈ to know pi electron effects which alter the dissociation properties or not. The results show the 1-C₄F₈ dissociating routs are approximately similar to 1-C₃F₆, replacing -CF₃ group of 1-C₃F₆ with -C₂F₅ of 1-C₄F₈. C₂F₃⁺ and CF₃⁺ ions are also predominantly produced in the 1-C₄F₈ ionization threshold region. These results may mean that the p electron dislocates over to the neighbor functional group.