[17a-K304-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-K304-7] Electronic properties and dissociation channels of 1-C₅F₁₀ molecule

〇Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori

Keywords:

1-C5F10,Etching gas,Primarily dissociation process

We are also continuously studying primarily dissociation routs of 1-C₅F₁₀ to know pi electron effects which alter the dissociation properties or not. The results show the 1-C₅F₁₀ dissociating routs are approximately similar to 1-C₃F₆ and 1-C₄F₈, replacing -CF₃ group of 1-C₃F₆ with -C₃F₇ of 1-C₅F₁₀. C₃F₅⁺ and CF₃⁺ ions are also predominantly produced in the 1-C₅F₁₀ ionization threshold region. These results may mean that the pi electron dislocates over to the neighbor functional group.