[17a-K401-1~11] 15.4 III-V-group nitride crystals

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[17a-K401-1] Characterization of sputtered GaInN on ScAlMgO₄ substrate

〇Naoto Fukami¹, Ryotaro Ito¹, Ryusei Sakamoto¹, Minori Kinoshita¹, Ai Sakakibara¹, Seiji Ishimoto², Seiya Nisimura², Atsushi Suzuki², Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Makoto Matsukura³, Takahiro Kojima³, Atsushi Fujita⁴, Fuminori Yoda⁴ (1.Meijo Univ., 2.E and E Evolution Ltd., 3.OXIDE Corp., 4.Shibaura Mechatronics Co.)

Keywords:

semiconductor,GaInN,sputtering

In III-nitride semiconductor LEDs, the external quantum efficiency of red LEDs is low. This is attributed to the quantum confinement Stark effect due to strong compressive strain in MQWs with a high InN mole fraction in the well layers. To mitigate this compressive strain, using a ScAlMgO₄ substrate that is lattice-matched to Ga_0.85In_0.15N can be effective. However, during GaInN growth using the MOVPE method, composition inhomogeneity and a rough surface are typically observed. To address this, the film was fabricated using a sputtering system based on the nitriding method, and the results are reported here.