The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[17a-K401-1~11]15.4 III-V-group nitride crystals

Mon. Mar 17, 2025 9:00 AM - 12:00 PM JST
Mon. Mar 17, 2025 12:00 AM - 3:00 AM UTC
K401 (Lecture Hall Bldg.)
Hiroto Sekiguchi(Toyohashi Univ. of Tech.), Yoshihiro Ueoka(東ソー株式会社)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[17a-K401-1]Characterization of sputtered GaInN on ScAlMgO4 substrate

〇Naoto Fukami1, Ryotaro Ito1, Ryusei Sakamoto1, Minori Kinoshita1, Ai Sakakibara1, Seiji Ishimoto2, Seiya Nisimura2, Atsushi Suzuki2, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Makoto Matsukura3, Takahiro Kojima3, Atsushi Fujita4, Fuminori Yoda4 (1.Meijo Univ., 2.E and E Evolution Ltd., 3.OXIDE Corp., 4.Shibaura Mechatronics Co.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K401-2]Investigation of red MQW growth on sputtered GaInN on ScAlMgO4 substrate

〇(M1)Ryotaro Ito1, Ryusei Sakamoto1, Naoto Hukami1, Minori Kinoshita1, Ai Sakakibara1, Seiji Ishimoto2, Seiya Nishimura2, Atsushi Suzuki2, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Makoto Matsukura3, Takahiro Kojima3, Atsushi Fujita4, Fuminori Yoda4 (1.Meijo Univ., 2.E&E Evolution Ltd., 3.OXIDE Corp., 4.Shibaura Mechatronics Co.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[17a-K401-3]In-situ XRD-RSM observation in the initial growth stage in RF-MBE growth of GaInN on ScAlMgO4

〇Mitsuki Moriya1, Takuo Sasaki2, Jo Takeuti1, Takeyosi Onuma1, Tohru Honda1, Tomohiro Yamaguchi1, Yasushi Nanishi3 (1.Kougakuin Univ., 2.QST, 3.Ritsumeikan Univ.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[17a-K401-4]Characteristics of annealed ScAlN/AlGaN /GaN heterostructures

〇Tomoya Okuda1, Ota Syunsuke2, Kubota Kouei3, Takuya Maeda3,4, Kawahara Takahiko5, Makiyama Kozo5, Nakata Ken5, Kobayashi Atsushi1,2 (1.Tokyo Univ. of Science, 2.Tokyo Univ. of Science graduate school, 3.The Univ. of Tokyo, 4.The Univ. of Tokyo graduate school, 5.Sumitomo Electric Industries)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K401-5]Low-temperature epitaxial growth of ScAlN films on AlGaN/GaN structures

〇Shunsuke Ota1, Tomoya Okuda2, Kouei Kubota3, Takuya Maeda3,4, Takahiko Kawahara5, Kozo Makiyama5, Ken Nakata5, Atsushi Kobayashi1,2 (1.Tokyo Univ. of Science, 2.Tokyo Univ. of Science Graduate school, 3.The Univ. of Tokyo, 4.The Univ. of Tokyo Graduate school, 5.Sumitomo Electric Industries)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K401-6]Characterization of Surface Oxidation of Sputtered ScAlN on GaN by X-ray Spectroscopy

〇Hikaru Sasaki1, Akihira Munakata1, Masaki Kobayashi1, Ryota Yamamoto2, Sawaki Sato2, Atsushi Kobayashi2, Yoshiaki Nakano1, Takuya Maeda1 (1.UTokyo, 2.TUS)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)English Presentation

[17a-K401-7]Study on pulsed sputtering epitaxy and subsequent high-temperature annealing of AlN thin films on graphene/4H-SiC(0001)

〇(M2)Qun Yu1, Kohei Ueno1, Ting Pan2, Keisuke Takemoto2, Kenta Emori2, Hiroshi Fujioka1 (1.Univ. of Tokyo, 2.Nissan Motor Co., Ltd.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K401-8]Relationship between structural and thermoelectric properties of InAlN thin film

〇Shota Hattori1, Tsutomu Araki1, Momoko Deura2,3 (1.Ritsumeikan Univ., 2.R-GIRO, 3.Waseda Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K401-9]Epitaxial growth of c-BScN layers by magnetron sputtering

〇Ryota Maeda1, Yoshitaka Taniyasu1, Kazuhide Kumakura1, Kazuyuki Hirama1 (1.NTT BRL)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-K401-10]Ohmic contacts to sputter-grown heavily Ge-doped GaN

〇(M1)Kohei Okabe1, Aiko Naito1, Kohei Ueno1, Hiroshi Fujioka1 (1.IIS)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[17a-K401-11]Homoepitaxial Growth of GaN on Mn-doped Semi-Insulating GaN Substrate by Plasma-Enhanced Molecular Beam Epitaxy

〇Hiroyuki Ohsaka1, Kouei Kubota1, Hikaru Sasaki1, Kenji Iso2, Meita Asami1, Masakazu Sugiyama1, Ryosho Nakane1, Takuya Maeda1 (1.UTokyo, 2.Mitsubishi Chemical Co.)
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