[17a-K401-1~11] 15.4 III-V-group nitride crystals

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K401-6] Characterization of Surface Oxidation of Sputtered ScAlN on GaN by X-ray Spectroscopy

〇Hikaru Sasaki¹, Akihira Munakata¹, Masaki Kobayashi¹, Ryota Yamamoto², Sawaki Sato², Atsushi Kobayashi², Yoshiaki Nakano¹, Takuya Maeda¹ (1.UTokyo, 2.TUS)

Keywords:

scandium alminum nitride,sputtering,x-ray spectroscopy

Sc_0.13Al_0.87N and Sc_0.27Al_0.73N thin films were fabricated by varying the growth conditions using the sputtering method. XPS measurements at hν = 850 eV and 1200 eV revealed an increase in Sc_O 2p_3/2 at 850 eV, suggesting significant oxidation near the surface. The Sc_O 2p_3/2 intensity increased proportionally with the Sc composition, further indicating notable oxidation. XAS measurements at the Sc-L edge suggested that the e_g orbital is primarily associated with surface oxidation.