Presentation Information
[17a-P01-21]Evaluation of Atmospheric Stability and Thermoelectric Performance of Epitaxial Mg3Bi2 Thin Films
〇Takeru Kuriyama1, Akito Ayukawa1, Kouki Nejo1, Haruhiko Udono1, Shunya Sakane1 (1.Ibaraki Univ.)
Keywords:
Thin film,Mg3Bi2,Zintl phase compound
Mg3(SbBi)2 is a promising alternative to Bi2Te3, a typical thermoelectric material, due to its low toxicity and low cost. In this study, we attempted to fabricate Mg3Bi2 thin films with excellent atmospheric stability by epitaxial growth of a Mg3Sb2 layer on a Mg3Bi2 layer. XRD analysis showed that the crystal structure of the sample without a Mg3Sb2 layer degraded in a short time, while the sample with a Mg3Sb2 layer maintained its crystal structure for over two weeks. The sample with the Mg3Sb2 layer showed a higher power factor than the sample without the Mg3Sb2 layer.
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