[17a-Y1311-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[17a-Y1311-4] Epitaxial growth of rutile-type GeO₂ thin films by sputtering

Yudai Otake¹, Yo Nagashima², Shohei Osawa¹, Daichi Oka¹, 〇Yasushi Hirose¹ (1.Tokyo Metropolitan Univ., 2.The Univ. of Tokyo)

Keywords:

GeO2,sputtering,ultra-widegap semiconductor