The 72nd JSAP Spring Meeting 2025
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17a-Y1311-1~10]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 17, 2025 9:00 AM - 11:45 AM JST
Mon. Mar 17, 2025 12:00 AM - 2:45 AM UTC
Y1311 (Bldg. 13)
Yongzhao Yao(Mie Univ.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)English Presentation

[17a-Y1311-1][The 46th Young Scientist Award Speech] Anisotropic NiOx/β-Ga2O3 p-n heterojunctions on (-201), (001), and (010) β-Ga2O3 substrates

〇Dinusha Herath Mudiyanselage1, Ramandeep Mandia2, Dawei Wang1, Jayashree Adivarahan1, Ziyi He1, Kai Fu3, Yuji Zhao4, Martha R. McCartney5, David J. Smith5, Houqiang Fu1 (1.School of Electrical, Computer, and Energy Engineering, Arizona State University, 2.School of Engineering for Matter, Transport and Energy, Arizona State University, 3.Department of Electrical and Computer Engineering, The University of Utah, 4.Department of Electrical and Computer Engineering, Rice University, 5.Department of Physics, Arizona State University)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[17a-Y1311-2]Fabrication of NiO/Ga2O3 pn Hetero Junction Diode with JTE Structure

〇Shinji Nakagomi1, Unno Ryohei2, Koji Yano2 (1.Ishinomaki Senshu, 2.Univ. of Yamanashi)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[17a-Y1311-3]Crack and Distortion of NiO Layer Formed on β-Ga2O3 Substrate

〇Shinji Nakagomi1 (1.Ishinomaki Senshu)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[17a-Y1311-4]Epitaxial growth of rutile-type GeO2 thin films by sputtering

Yudai Otake1, Yo Nagashima2, Shohei Osawa1, Daichi Oka1, 〇Yasushi Hirose1 (1.Tokyo Metropolitan Univ., 2.The Univ. of Tokyo)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[17a-Y1311-5]Growth Stabilization of Rutile GeO2 by Bi Addition in Mist CVD

Carolina Fernandez-Saiz1, Kazuki Shimazoe2, Ichiro Seike2, Taisei Kano2, 〇HIROYUKI NISHINAKA2 (1.Univ. Valencia, 2.Kyoto Inst. Tech.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[17a-Y1311-6]Propose of “voltage-applied time-resolved photoluminescence” for investigation of carrier-transport process in semiconductor/electrolyte junction

〇Kana Ueda1, Keito Okubo1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[17a-Y1311-7]Crystal Orientation Dependence of Photoluminescence of Mist-CVD Grown α-Ga2O3 Thin Films

〇Riena Jinno1, Natthajuks Pholsen1, Satoshi Iwamoto1,2 (1.RCAST Univ. Tokyo, 2.IIS Univ. Tokyo)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-Y1311-8]Effects of Sn doping on α-Ga2O3 photonic crystals

〇Kento Fujita1, Tomoki Otsuka1, Ryuichi Matsuda2, Toshiya Watanabe2, Saki Ota2, Kentaro Kaneko3 (1.Col. of Scp. & Eng. Ritsumeikan Univ., 2.Mitsubishi Heavy Industries, Ltd., 3.RISA.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-Y1311-9]β-Ga2O3 on ScAlMgO4 Substrates − Dependence on The Substrate Off-Axis Angle

〇Soma Kato1, Jyunziro Kikawa1, Makoto Matsukura3, Takahiro Kojima3, Kentaro Kaneko2, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.ROST, 3.OXIDE Co.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-Y1311-10]Electronic structural analysis of impurity-doped Ga2O3

〇Takahiro Kawamura1, Takeshi Nishimura1, Takuma Yamashita1, Toru Akiyama1, Yoshihiro Kangawa2 (1.Mie Univ., 2.RIAM, Kyushu Univ.)
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