[17a-Y1311-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-Y1311-9] β-Ga₂O₃ on ScAlMgO₄ Substrates − Dependence on The Substrate Off-Axis Angle

〇Soma Kato¹, Jyunziro Kikawa¹, Makoto Matsukura³, Takahiro Kojima³, Kentaro Kaneko², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.ROST, 3.OXIDE Co.)

Keywords:

crystal growth

We have grow β-Ga₂O₃ on ScAlMgO₄ (SAM) substrates using the mist CVD method. The grown thin films have in-plane rotation domains and are not single crystals. By growing β-Ga₂O₃ on SAM substrates with an off-angle, some of the rotation domains were suppressed. SAM substrates with an off-angle are effective for orientation control. We aim to find the optimal off-angle and grow β-Ga₂O₃ single crystals.