[17p-K101-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[17p-K101-10] Low resistivity of Mo with high intensity FLA

〇Kanki Yoshida¹, Shogo Sigemasu¹, Hideaki Tanimura¹, Katsuhiro Mitsuda¹, Shinichi Kato¹ (1.SCREEN Semiconductor Solutions Co., Ltd.)

Keywords:

interconnect,annealing,resistivity

As interconnect widths become narrower, resistance increases beyond the interconnect width ratio, which has become an issue. Mo is attracting attention as a new interconnect metal, but annealing at 800°C or higher is required to lower the resistance of Mo. We have newly developed a high-intensity FLA (Flash Lamp Annealing) capable of millisecond annealing. In this report, we examine the possibility of applying the new FLA to the interconnect process, which has severe thermal budget restrictions, and verify the low resistance of Mo.