[17p-K101-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[17p-K101-8] Electrical characteristics of β-(Al,Ga)₂O₃ quasi-vertical Schottky barrier diodes

〇Kota Nakano¹, Morita Ryo¹, In Ka¹, Okumura Hironori¹, Sakurai Takeaki¹ (1.Tsukuba Univ.)

Keywords:

semiconductor,gallium oxide,schottly barrier diode

β-Gallium Oxide (β-Ga₂O₃) has garnered attention as a low-cost material for power devices due to its high breakdown electric field strength (Ec) and the possibility of growth using melt techniques. By utilizing β-(Al,Ga)₂O₃, which potentially possesses an even higher Ec, further improvements in breakdown voltage are anticipated. In this study, a quasi-vertical Schottky barrier diode (SBD) with a β-(Al,Ga)₂O₃ channel layer was fabricated, and its electrical characteristics were evaluated.