[17p-K101-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K101-9] Comparison of I-V characteristics of needle and junction contact Schottky barrier diodes using FeS₂ crystal

〇Riku Ando¹, Gaku Kamio¹, Ren Morita¹, Yoriko Suda¹, Hiroshi Fujioka², Narihiko Maeda¹ (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)

Keywords:

Schottky barrier diode,Semiconductor,Narrow gap semiconductor