[17p-K202-1~7] 13.3 Insulator technology

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[17p-K202-5] Chemical oxidation of germanium by nitric acid at low temperature

Atsutoki Harada¹, 〇Takeshi Kanashima¹ (1.Kindai Univ.)

Keywords:

germanium,Chemical oxide,GeO2

Germanium (Ge) has gathered much attention as a new channel material, and we focused on chemical oxidation using nitric acid to prepare an oxide film at a low temperature. When immersed in nitric acid (35%) at room temperature, the rough surface of the Ge substrate is observed. The current-voltage characteristics were examined, and this shows that good insulation is obtained. Furthermore, the results suggesting the formation of a very thin film are obtained by lowering nitric acid concentration.