The 72nd JSAP Spring Meeting 2025
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Oral presentation13 Semiconductors : 13.3 Insulator technology

[17p-K202-1~7]13.3 Insulator technology

Mon. Mar 17, 2025 1:00 PM - 2:45 PM JST
Mon. Mar 17, 2025 4:00 AM - 5:45 AM UTC
K202 (Lecture Hall Bldg.)
Takashi Onaya(東大)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[17p-K202-1]SiO2/Si interface defect generation and recovery in HKMG stack fabrication processing

〇Shota Nunomura1, Yukinori Morita1 (1.AIST)
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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[17p-K202-2]Research on MOS structure using high dielectric constant materials TiO2

〇Yota Uchida1, Shohei Onizuka1, Yositaka Iwazaki1, Tomo Ueno1 (1.Tokyo univ. of Agri & Tech)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K202-3]Elimination of slow traps in Ge MOS interface by optimizing pre-oxidization and post annealing

〇(B)Shunsuke Takaki1, Wenchang Yeh1 (1.Shimane Univ.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[17p-K202-4]Low temperature annealing effect on Ge gate stack

〇Hajime Kuwazuru1, Taisei Aso1, Dong Wang2, Keisuke Yamamoto2,3 (1.IGSES, Kyushu Univ., 2.FES, Kyushu Univ., 3.REISI Kumamoto Univ.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[17p-K202-5]Chemical oxidation of germanium by nitric acid at low temperature

Atsutoki Harada1, 〇Takeshi Kanashima1 (1.Kindai Univ.)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[17p-K202-6]Investigation of low-temperature oxidation of Ge substrates using sulfuric acid additive

〇Hoshiki Harata1, Gen Shimizu1, Yu Hashimoto1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo Univ. of Agri. and Tech.)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[17p-K202-7]Preparation and evaluation of GeO2/Ge structure using CVD method.

〇Takumi Suzuki1, Hiroki Inoue1, Keita Ishizuka1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo Univ. Agri. & Tech.)
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