[17p-K301-1~14] 13.7 Compound and power devices, process technology and characterization

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K301-10] FET operation of 2DHG GaN structure without p-contact layer

〇Jeonghwan Lim¹, Kouki Narusawa¹, Jimy Encomendero Risco², Xing Grace², Jena Debdeep², Yuusuke Hayashi³, Hideto Miyake⁴, Yasuyuki Miyamoto¹ (1.Science Tokyo, 2.Cornell Univ., 3.NIMS, 4.Mie Univ.)

Keywords:

GaN,Two-dimensional hole gas (2DHG),p-FET