The 72nd JSAP Spring Meeting 2025
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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[17p-K301-1~14]13.7 Compound and power devices, process technology and characterization

Mon. Mar 17, 2025 1:15 PM - 5:00 PM JST
Mon. Mar 17, 2025 4:15 AM - 8:00 AM UTC
K301 (Lecture Hall Bldg.)
Junji Kotani(Sumitomo Electric Industries)
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[17p-K301-1]Reducing impact ionization noise by double-doped InP-HEMT

〇Taro Sasaki1, Takuya Tsutsumi2, Hiroki Sugiyama1, Yuki Yoshiya1, Takuya Hoshi1, Yasuyuki Miyamoto3, Fumito Nakajima1 (1.NTT Device Technology Labs., 2.Osaka Metropolitan Univ., 3.Inst. of Science Tokyo)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[17p-K301-2]Enhancement of Threshold Voltage in EID AlGaN/GaN MOS-HEMT

〇Takuma Nanjo1, Masayuki Furuhashi1, Tatsuro Watahiki1, Takashi Egawa2 (1.Mitsubishi Electric Corp., 2.Nagoya Inst. of Tech.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K301-3]Nanobeam X-ray diffraction analysis of local lattice deformation and temperature variation in the AlGaN layer during AlGaN/GaN HEMT operation

〇(M1)Junpei Yamamoto1, Tetsuya Tohei1, Yasuhiko Imai2, Zhuo Diao1, Kazushi Sumitani2, Shigeru Kimura2, Ryouta Ochi3, Taketomo Sato3, Tamotsu Hashizume4, Akira Sakai1 (1.Grad. Sch. of Eng. Sci. Osaka Univ., 2.JASRI, 3.RCIQE Hokkaido Univ., 4.IMaSS Nagoya Univ.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K301-4]Gate-First AlGaN/GaN HEMTs with n+-GaN/n+-AlGaN Bilayer Cap Structure

〇Takuya Fujimoto1, Yuji Ando1,2, Hidemasa Takahashi1, Ryutaro Makisako1, Akio Wakejima3, Jun Suda1,2 (1.Nagoya Univ., 2.IMass, Nagoya Univ., 3.Kumamoto Univ.)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K301-5]Electron-Density Dependence of Saturation Drift Velocity of 2DEG in AlGaN/GaN

〇Yusuke Wakamoto1, Yuki Imazeki2, Shigeki Yoshida2, Kozo Makiyama2, Ken Nakata2, Takuya Maeda1 (1.UTokyo, 2.Sumitomo Electric Industries, Ltd)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K301-6]Transport Property of 2DEG in ScAlN/AlGaN/AlN/GaN Heterostructure Prepared by Sputtering Method

〇Kouei Kubota1, Yusuke Wakamoto1, Takahiko Kawahara2, Shigeki Yoshida2, Kozo Makiyama2, Ken Nakata2, Atsushi Kobayashi3, Takuya Maeda1 (1.UTokyo, 2.Sumitomo Electric Industries, Ltd., 3.TUS)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[17p-K301-7][The 57th Young Scientist Presentation Award Speech] N-polar GaN/InAlN HEMT with high power density

〇Akihiro Hayasaka1, Shigeki Yoshida1, Akira Mukai1, Isao Makabe1, Yukihiro Tsuji1, Kozo Makiyama1, Ken Nakata1 (1.Sumitomo Electric)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[17p-K301-8]The relation between DC characteristics of N-polar GaN-channel HEMTs and surface morphology

〇Yuki Yoshiya1, Takuya Hoshi1, Taro Sasaki1, Hiroki Sugiyama1, Fumito Nakajima1 (1.NTT Device Technology Labs)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K301-9]Operating temperature dependence of the performance of N-polar GaN/AlN HEMTs

〇(M1)Fumiya Yamanaka1, Zazuli Aina Hiyama1, Kai Fujii1, Taisei Kimoto1, Ryosuke Ninoki1, Satoshi Kurai1, Narihito Okada1, Atsushi Tanaka2, Shugo Nitta2, Yoshio Honda2, Hiroshi Amano2, Masanobu Hiroki3, Kazuyuki Hirama3, Yoshitaka Taniyasu3, Takayuki Nakano4,5, Yoichi Yamada1 (1.Grad.School of Sci. & Tech. for Innovation, Yamaguchi Univ., 2.Nagoya Univ. IMaSS, 3.NTT BRL, 4.Shizuoka University., 5.R.I.E. Shizuoka University.)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K301-10]FET operation of 2DHG GaN structure without p-contact layer

〇Jeonghwan Lim1, Kouki Narusawa1, Jimy Encomendero Risco2, Xing Grace2, Jena Debdeep2, Yuusuke Hayashi3, Hideto Miyake4, Yasuyuki Miyamoto1 (1.Science Tokyo, 2.Cornell Univ., 3.NIMS, 4.Mie Univ.)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K301-11]Emission Microscopy Observation of AlN Schottky Barrier Diodes under Forward Bias

〇Issei Sasaki1, Masanobu Hiroki2, Kazuhide Kumakura2, Kazuyuki Hirama2, Yoshitaka Taniyasu2, Atsushi Tanaka3, Yoshio Honda3, Yoshiaki Nakano1, Takuya Maeda1 (1.UTokyo, 2.NTT-BRL, 3.Nagoya Univ.)
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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[17p-K301-12]Nearly Ideal Thermionic Field Emission in AlN SBD with Graded AlGaN Contact Layer

〇Takuya Maeda1, Yusuke Wakamoto1, Issei Sasaki1, Akihira Munakata1, Masanobu Hiroki2, Kazuyuki Hirama2, Kazuhide Kumakura2, Yoshitaka Taniyasu2 (1.UTokyo, EEIS/EEIC, 2.NTT Basic Research Lab. NTT Co.)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[17p-K301-13]RF characteristics of AlN-based polarization-doped FETs

〇Seiya Kawasaki1, Masanobu Hiroki1, Kazuyuki Hirama1, Kazuhide Kumakura1, Yoshitaka Taniyasu1 (1.NTT BRL)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[17p-K301-14]GaN HEMTs on 2-inch polycrystalline diamond wafers

Chiharu Moriyama1, Yoshiki Sakaida2, Hiroki Uratani2, Yoshiki Nishibayashi3, Marika Takeuchi3, 〇Naoteru Shigekawa1, Jianbo Liang1 (1.Osaka Metropolitan Univ., 2.Air Water Inc., 3.Sumitomo Electric Industries, Ltd.3)
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