[17p-K301-1~14] 13.7 Compound and power devices, process technology and characterization

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K301-11] Emission Microscopy Observation of AlN Schottky Barrier Diodes under Forward Bias

〇Issei Sasaki¹, Masanobu Hiroki², Kazuhide Kumakura², Kazuyuki Hirama², Yoshitaka Taniyasu², Atsushi Tanaka³, Yoshio Honda³, Yoshiaki Nakano¹, Takuya Maeda¹ (1.UTokyo, 2.NTT-BRL, 3.Nagoya Univ.)

Keywords:

Schottky,AlN,barrier height

AlN is expected to be a material for electronic devices capable of high-voltage and high-temperature operation, owing to its extremely large band gap (~6.0 eV) and high breakdown electric field (~12 MV/cm). However, the impact of crystal defects in AlN on device performance remains poorly understood. In this study, forward-biased AlN SBDs were observed by emission microscopy, and the relationship with current-voltage characteristics was investigated to examine the origin of killer defects.