[17p-K301-1~14] 13.7 Compound and power devices, process technology and characterization

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[17p-K301-14] GaN HEMTs on 2-inch polycrystalline diamond wafers

Chiharu Moriyama¹, Yoshiki Sakaida², Hiroki Uratani², Yoshiki Nishibayashi³, Marika Takeuchi³, 〇Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka Metropolitan Univ., 2.Air Water Inc., 3.Sumitomo Electric Industries, Ltd.3)

Keywords:

surface activated bonding,polycrystalline diamond wafer,GaN HEMT

We succeeded in transfer of a nitride epi layer to a 2-inch polycrystalline diamond wafer using the surface activated bonding technology. We subsequently fabricated GaN HEMTs on the transferred nitride epi layer after bonding.