[17p-K301-1~14] 13.7 Compound and power devices, process technology and characterization

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K301-3] Nanobeam X-ray diffraction analysis of local lattice deformation and temperature variation in the AlGaN layer during AlGaN/GaN HEMT operation

〇(M1)Junpei Yamamoto¹, Tetsuya Tohei¹, Yasuhiko Imai², Zhuo Diao¹, Kazushi Sumitani², Shigeru Kimura², Ryouta Ochi³, Taketomo Sato³, Tamotsu Hashizume⁴, Akira Sakai¹ (1.Grad. Sch. of Eng. Sci. Osaka Univ., 2.JASRI, 3.RCIQE Hokkaido Univ., 4.IMaSS Nagoya Univ.)

Keywords:

semiconductor,Synchrotron X-ray Operando Measurement

AlGaN/GaN HEMTs are attracting attention as next-generation devices because of their low on-resistance and high-frequency operation. However, lattice defects caused by the reverse piezoelectric effect and Joule heating during operation are factors that degrade performance. In this study, we used nano-beam X-ray diffraction at SPring-8 to quantitatively evaluate the local lattice deformation and temperature changes in the AlGaN layer during HEMT operation. We succeeded in observing the increase in c-axis lattice strain accompanying the application of gate voltage and drain voltage, as well as the position dependence of temperature changes in the gate region.