[17p-K301-1~14] 13.7 Compound and power devices, process technology and characterization

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[17p-K301-8] The relation between DC characteristics of N-polar GaN-channel HEMTs and surface morphology

〇Yuki Yoshiya¹, Takuya Hoshi¹, Taro Sasaki¹, Hiroki Sugiyama¹, Fumito Nakajima¹ (1.NTT Device Technology Labs)

Keywords:

N-polar GaN HEMT