[17p-K301-1~14] 13.7 Compound and power devices, process technology and characterization

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K301-9] Operating temperature dependence of the performance of N-polar GaN/AlN HEMTs

〇(M1)Fumiya Yamanaka¹, Zazuli Aina Hiyama¹, Kai Fujii¹, Taisei Kimoto¹, Ryosuke Ninoki¹, Satoshi Kurai¹, Narihito Okada¹, Atsushi Tanaka², Shugo Nitta², Yoshio Honda², Hiroshi Amano², Masanobu Hiroki³, Kazuyuki Hirama³, Yoshitaka Taniyasu³, Takayuki Nakano^4,5, Yoichi Yamada¹ (1.Grad.School of Sci. & Tech. for Innovation, Yamaguchi Univ., 2.Nagoya Univ. IMaSS, 3.NTT BRL, 4.Shizuoka University., 5.R.I.E. Shizuoka University.)

Keywords:

N-polar AlN,High Electron Mobility Transistor,High temperature operation

In this study, the temperature characteristics of HEMTs were evaluated in the temperature range from room temperature to 800 °C to confirm the superiority of high-temperature operation of N-polar surface GaN/AlGaN/AlN HEMTs using AlN, which has about twice the bandgap of GaN, as the base material. Pinch-off was confirmed in the temperature range from room temperature to 600 °C. Above 700 °C, the I_DS decreased significantly, pinch-off was not possible and the leakage current increased with temperature. The temperature resistance characteristics up to approximately 600 °C were demonstrated for this device.