[17p-K302-1~8] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K302-2] Impact of momentum relaxation processes on electron transport in Semiconductor Superlattices

〇Nagi Maeda¹, Xiangyu Zhu¹, Marc Bescond², Naomi Nagai¹, Kazuyuki Kuroyama¹, Kazuhiko Hirakawa¹ (1.IIS, INQIE, Univ. of Tokyo, 2.IN2MP, Aix-Marseille Univ.)

Keywords:

superlattices,Bloch oscillation

One approach to the THz frequency range was proposed more than 50 years ago by Esaki and Tsu, who suggested utilizing Bloch oscillations of electrons in semiconductor superlattices for oscillators. However, the realization of Bloch oscillators has remained elusive due to the formation of high-field domains in the negative differential conductance region, where Bloch gain is expected to occur. In this presentation, we report that the momentum relaxation time, obtained by analyzing the current density-voltage (J-V) characteristics of doped Al_0.4Ga_0.6As/GaAs superlattices, is proportional to the sixth power of the well width of the superlattice.