[17p-K304-1~8] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K304-4] Consideration of ITO etching surface reaction mechanism with high temperature using H₂ plasma

〇Ryohei Suzuki¹, Yoshinori Kodama¹, Kazuhisa Matsuda¹, Katsuhisa Kugimiya¹, Yoshiya Hagimoto¹, Hayato Iwamoto¹ (1.Sony Semiconductor Solutions Corp)

Keywords:

Dry etching,ITO,H2 plasma

Indium tin oxide (ITO) is widely used in touch panels and solar cells because of its high transparency and electrical conductivity. However, it is known that processing by dry etching is difficult because the reaction products of In, the main component of ITO, with halogens have a high boiling point. Although it has been reported that the reaction products can be easily volatilized by raising the temperature, and that processing characteristics differ depending on the etching gas, such as hydrogen gas, hydrocarbon gas, and halogen gas, there are few examples that focus on the mechanisms and surface reactions. Therefore, in this article, we report the results of an investigation into the mechanism of surface reactions in high-temperature ITO processing using H₂ plasma.