The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation8 Plasma Electronics : 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[17p-K304-1~8]8.2 Plasma deposition of thin film, plasma etching and surface treatment

Mon. Mar 17, 2025 1:30 PM - 3:45 PM JST
Mon. Mar 17, 2025 4:30 AM - 6:45 AM UTC
K304 (Lecture Hall Bldg.)
Atsushi Tanide(SCREEN), Shih-Nan Hsiao(Nagoya University)
PRSonySemiconductor
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K304-1]Reduction in Local Etching Amount Variation for Etch Back Process of TiN

〇Yudai Mashiko1, Taku Iwase1, Makoto Satake1, Yasushi Sonoda2, Motohiro Tanaka2, Naoyuki Kofuji2, Kenji Maeda2 (1.Hitachi Ltd., 2.Hitachi High-Tech Corp.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K304-2]Plasma treatment using BCl3 pulsed plasma for roughness reduction of metal oxide resist

〇Taiga Kasai1, Miyako Matsui1, Minami Shoji1, Tomoyasu Shohjoh1, Makoto Miura2, Kenichi Kuwahara2 (1.Hitachi Ltd., R&D Group, 2.Hitachi High-Tech Corp.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K304-3]Etching Characteristics of Baked Photoresist by Reactive Atmospheric-pressure Thermal Plasma Jet and its Application to EBR Process

〇(M2)Kyohei Matsumoto1, Jiawen Yu1, Hiroaki Hanafusa1, Seiichiro Higashi1 (1.Graduate School of Advanced Science and Engineering, Hiroshima University)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K304-4]Consideration of ITO etching surface reaction mechanism with high temperature using H2 plasma

〇Ryohei Suzuki1, Yoshinori Kodama1, Kazuhisa Matsuda1, Katsuhisa Kugimiya1, Yoshiya Hagimoto1, Hayato Iwamoto1 (1.Sony Semiconductor Solutions Corp)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[17p-K304-5][The 57th Young Scientist Presentation Award Speech] Analysis of reaction mechanism of SiO2 film during cryogenic etching using F2/Ar/H2 gas plasma

〇Yuma Kato1, Junji Kataoka1, Ryo Saito2, Daiki Iino1, Hiroyuki Fukumizu1, Tetsuya Sato2, Kazuaki Kurihara1 (1.Kioxia Corp., 2.Yamanashi Univ.)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[17p-K304-6]Etching Product’s Distribution by Ion Beam with Oblique Angle

Tomoko Ito1, 〇Kazuhiro Karahashi1, Satoshi Hamaguchi1 (1.Osaka Univ.)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K304-7]Effects of Radical Sticking Probability on Transport in High-Aspect-Ratio Holes

〇(M1)Takumi Kurushima1, Takayoshi Tsutsumi2, Makoto Sekine2, Kenichi Inoue2, Kenji Ishikawa2 (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[17p-K304-8]The temperature dependance in selective etching of GaN using O2 added Cl2 plasma

〇Shohei Nakamura1,2, Atsushi Tanide1,2, Takahiro Kimura1,2, Trung Nguyen Tran2, Kenichi Inoue2, Kenji Ishikawa2 (1.SCREEN Holdings, 2.Nagoya Univ.)
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