[17p-K304-1~8] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K304-7] Effects of Radical Sticking Probability on Transport in High-Aspect-Ratio Holes

〇(M1)Takumi Kurushima¹, Takayoshi Tsutsumi², Makoto Sekine², Kenichi Inoue², Kenji Ishikawa² (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS)

Keywords:

sticking probability,high aspect ratio etching

The sticking probability of radicals on sidewall protective films is a critical parameter in particle transport analysis for high aspect ratio etching. Therefore, we developed a novel method to estimate the sidewall sticking probability by varying the aspect ratio of orifices and investigating the aspect ratio dependence of radical transmission. The sidewall sticking probability was experimentally estimated, and it was confirmed to be smaller than the literature values for flat surfaces.