[17p-K304-1~8] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[17p-K304-8] The temperature dependance in selective etching of GaN using O₂ added Cl₂ plasma

〇Shohei Nakamura^1,2, Atsushi Tanide^1,2, Takahiro Kimura^1,2, Trung Nguyen Tran², Kenichi Inoue², Kenji Ishikawa² (1.SCREEN Holdings, 2.Nagoya Univ.)

Keywords:

Selective etching,Gallium nitride,High temperature etching

In the manufacture of GaN-HEMTs with a P-type gate structure, a technique is required for selectively etching P-type GaN with respect to AlGaN. Although selective etching using chlorine/oxygen plasma has been reported in previous studies, the formation of damage on the AlGaN surface is an issue. In this report, we describe how etching selectivity was achieved using chlorine/oxygen plasma under substrate heating to reduce damage, based on a different principle compared to conventional methods.