[17p-K501-1~9] 6.3 Oxide electronics

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[17p-K501-1] Non-polar switching of carbon-doped hafnia/zirconia (HZO) thin films by mist CVD for CeRAM

〇(D)Masamichi Azuma^1,2, Mamoru Ikeda¹, Tsubasa Miyamoto¹, Hiroyuki Nishinaka¹ (1.Kyoto Inst. of Tech., 2.Symetrix Corp.)

Keywords:

CeRAM (Correlated electron Random Access Memory),carbon-doped,Hafunia/Ziruconia (HZO) thin films

In carbon-doped hafnium dioxide and nickel oxide thin films, the band structure changes and the band gap decreases significantly, enabling the non-polarity switching phenomenon between metal and insulator electrically. Strongly correlated electron random access memory (CeRAM) has been proposed as a resistive memory that utilizes this phenomenon. In this paper, we report on the fabrication of carbon-doped HZO thin films using the mist CVD method, which allows deposition under atmospheric pressure, and the confirmation of the operation of CeRAM elements.