The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation6 Thin Films and Surfaces : 6.3 Oxide electronics

[17p-K501-1~9]6.3 Oxide electronics

Mon. Mar 17, 2025 1:00 PM - 3:30 PM JST
Mon. Mar 17, 2025 4:00 AM - 6:30 AM UTC
K501 (Lecture Hall Bldg.)
Keisuke Ide(Tokyo Tech)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[17p-K501-1]Non-polar switching of carbon-doped hafnia/zirconia (HZO) thin films by mist CVD for CeRAM

〇(D)Masamichi Azuma1,2, Mamoru Ikeda1, Tsubasa Miyamoto1, Hiroyuki Nishinaka1 (1.Kyoto Inst. of Tech., 2.Symetrix Corp.)
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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[17p-K501-2]Study of HfxZr1-xO2/Si interface potential by terahertz emission spectroscopy

〇(M2)TIANKAI JIA1, Dongxun Yang2, Haining Li2, Manjakavahoaka Razanoelina1, Takahiro Teramoto3, Takeshi Kijima2, Hiroyasu Yamahara2, Munetoshi Seki2, Hitoshi Tabata2, Masayoshi Tonouchi4, Iwao Kawayama1 (1.Kyoto University, 2.The University of Tokyo, 3.The University of Kitakyushu, 4.Osaka University)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K501-3]Enhancing the current density of ZnO-TFTs using an oxide multilayer structure and a low-temperature annealing for OLED driving TFTs

〇(B)Naoki Takada1, kensuke Nakata1, Kaiko Yuge1, Akira Fujimoto1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Toshihiko Maemoto1 (1.Osaka Inst. of Tech.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K501-4]Development of coating agent for forming a layered Fe doped ZnO thin film based on the properties of diethyl zinc

〇Naoki Noda1, Kentaro Sakai2, Tomohiro Haraguchi2, Haruki Maebayashi1, Tsukasa Futagoishi1, Masahiro Aoki1 (1.Tosoh Finechem Corp., 2.Miyazaki univ.)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[17p-K501-5]Characteristic change by annealing temperature and analysis by depth-resolved HAXPES of amorphous IGZO thin film transistor for RAM application

〇Tetsuya Miyazawa1, Mototaka Ochi1, Hiroshi Goto2, Masaharu Kobayashi3, Akira Yasui4, Jiayi Tang4 (1.Kobe Steel, Ltd., 2.Kobelco Research Institute, Inc., 3.The Univ. of Tokyo, 4.JASRI)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[17p-K501-6]Characterization of TiO2 thin-film transistors with adsorbed alkali metal

〇Ryo Miyazawa1, Haruto Suzuki1, Hibiki Takeda1, Fumihiko Hirose1 (1.Yamagata Univ.)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[17p-K501-7]Improvement of carrier diffusion length of Cu2O films deposited by DC sputtering using Cu/CuO mixture target

〇Akio Sekiguchi1, Kensyo Hatakawa1, Shinsuke Miyajima1 (1.Science Tokyo)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)English Presentation

[17p-K501-8]Investigation on N-doped Cu2O Thin Films for High-Performance Cu2O/Ga2O3 p-n Junction Power Devices

〇Minseok Kim1, Daichi Miyagi1, Isao Tamai2, Yusuke Maeyama2, Yuki Oguchi1, Junjun Jia3, Yuzo Shigesato1 (1.Aoyama Gakuin Univ., 2.Shindengen Electric Manufacturing Co.,Ltd., 3.Waseda univ.)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[17p-K501-9]Measurement of the sheet resistance in low-layered correlated oxide Ca3-xBixCo4O9 and Bi2Sr2Co2Oy and estimation of the performance as a transparent conducting oxide

〇(B)ryota suzuki1, shin muranaka1, shogo yoshida1, ryuji okazaki1 (1.Tokyo Univ. of Sci.)
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