[17p-K501-1~9] 6.3 Oxide electronics

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[17p-K501-5] Characteristic change by annealing temperature and analysis by depth-resolved HAXPES of amorphous IGZO thin film transistor for RAM application

〇Tetsuya Miyazawa¹, Mototaka Ochi¹, Hiroshi Goto², Masaharu Kobayashi³, Akira Yasui⁴, Jiayi Tang⁴ (1.Kobe Steel, Ltd., 2.Kobelco Research Institute, Inc., 3.The Univ. of Tokyo, 4.JASRI)

Keywords:

oxide semiconductor,HAXPES,hafnium oxide

TFTs for RAM consisting of 8-nm-thick IGZO and 10-nm-thick HfO_x films were fabricated, and the property changes after heat treatment were verified. Depth-resolved HAXPES was used to verify these changes from the chemical state of the TFT materials. Depth-resolved HAXPES can perform nondestructive depth HAXPES analysis using the fact that the detection angle of photoelectrons correlates with the escape depth. The samples with the same structure as the TFTs were analyzed using this technique. The chemical states of oxygen in IGZO correlates with TFT properties.