[17p-K501-1~9] 6.3 Oxide electronics

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[17p-K501-7] Improvement of carrier diffusion length of Cu₂O films deposited by DC sputtering using Cu/CuO mixture target

〇Akio Sekiguchi¹, Kensyo Hatakawa¹, Shinsuke Miyajima¹ (1.Science Tokyo)

Keywords:

Cu2O,solar cell,diffusion length

The Cu₂O solar cells have attracted attention as a non-toxic material for the top cell of 4-terminal tandem solar cells. Our group has been considering the deposition of Cu₂O films by DC sputtering using Cu/CuO mixture target, which offers a low-cost and high-rate film deposition method. In this study, we focus on the carrier diffusion length of Cu₂O films for high-quality solar cell, investigating the impact of surface/interface conditions and phenomena that enhance the diffusion length.