[17p-K503-1~12] 6.6 Probe Microscopy

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[17p-K503-12] Temperature controlled local DLTS measurement of SiO₂/SiC by time-resolved scanning nonlinear dielectric microscopy

〇Kohei Yamasue¹, Yasuo Cho² (1.RIEC, Tohoku Univ., 2.NICHe, Tohoku Univ.)

Keywords:

scanning nonlinear dielectric microscopy,SNDM,semiconductor

To microscopically evaluate deep-level interface defects in wide-bandgap semiconductors such as SiO₂/SiC, we demonstrate a temperature-controlled local DLTS measurement using time-resolved scanning nonlinear dielectric microscopy. This technique was applied to thermally oxidized SiO₂/SiC and interface defect density images were obtained in the temperature range of 298–423 K. We observed that the time constant of carrier emission processes from interface defects decreased with increasing temperature at the nanoscale.