[17p-K507-1~6] 7.3 Micro/Nano patterning and fabrication

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[17p-K507-4] Improvement of residual layer etching in nanoimprint process

〇Hiroaki Kawata¹, Kota Yamasaki¹, Kai Funato¹, Tetsuya Matsuyama¹ (1.Osaka Metro. Univ.)

Keywords:

nanoimprint,residual layer,reactive ion etching

Resin patterns fabricated by nanoimprint process often have residual layer at the bottom. When the residual layer is removed by O2 RIE, the pattern shape is degraded by side etching. This is particularly clear in pillar patterns. For reducing this pattern degradation, a switch process was developed, in which CHF3/O2 plasma for resist etching and CHF3 plasma for side wall protection layer formation are alternately repeated. By using this process for 200 nm diameter polystyrene pillars, the residual layer could be successfully removed with almost no pattern degradation.