[17p-Y1311-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:00 PM - 1:30 PM JST(4:00 AM - 4:30 AM UTC)

[17p-Y1311-1] [The 46th Best Review Paper Award Speech] Structural characterization of defects in EFG- and HVPE-grown β-Ga₂O₃ crystals

〇Osamu Ueda¹, Makoto Kasu², Hirotaka Yamaguchi³ (1.Meiji Univ., 2.Saga Univ., 3.AIST)

Keywords:

gallium oxide,dislocation,stacking fault

β-Ga₂O₃ is the most stable phase among five metastable phases. It has an ultra-wide bandgap (4.5~4.9 eV), high critical electric field, and high peak electron velocity and is an attractive semiconductor material for next genaration power and radio frequency (RF) devices and so on. In the development of these devices, since various defects influence the device performance and reliability, it is important to have better understanding of the defects. In this talk, we present results of structural characterization of dislocations, stacking faults, twins, and nanovoids, and discuss their generaton mechanisms and influence on device characteristics.