The 72nd JSAP Spring Meeting 2025
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17p-Y1311-1~9]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 17, 2025 1:00 PM - 3:45 PM JST
Mon. Mar 17, 2025 4:00 AM - 6:45 AM UTC
Y1311 (Bldg. 13)
Takahiro Kawamura(Mie Univ.)
1:00 PM - 1:30 PM JST(4:00 AM - 4:30 AM UTC)

[17p-Y1311-1][The 46th Best Review Paper Award Speech] Structural characterization of defects in EFG- and HVPE-grown β-Ga2O3 crystals

〇Osamu Ueda1, Makoto Kasu2, Hirotaka Yamaguchi3 (1.Meiji Univ., 2.Saga Univ., 3.AIST)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[17p-Y1311-2]Evaluation of electronic structure of Hf-based ferroelectric/β-Ga2O3 interface

〇Katsuhiro K Furukawa1, Ryuto Ichikawa1, Shodai Ata1, Takeshi Yoshimura1, Norifumi Fujimura1 (1.Osaka Metro. Univ.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[17p-Y1311-3]Nitrogen doping into β - Ga2O3 by RF Nitrogen plasma irradiations

〇(B)Shodai Ata1, Ryuto Ichikawa1, Furukawa Katsuhiro1, Hisashi Soma1, Takeshi Yoshimura1, Takahiro Nagata2, Yoshiyuki Yamashita2, Masaaki Kobata3, Tatsuo Fukuda3, Norifumi Fujimura1 (1.Osaka Metro. Univ., 2.NIMS, 3.JAEA)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[17p-Y1311-4]Evaluation of line shaped voids in β-Ga2O3 grown by the vertical Bridgman method

〇(M1C)Ukyo Miyagi1, Toshinori Taishi1, Keigo Hoshikawa1 (1.Shinshu Univ.)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[17p-Y1311-5]Correlation Between Anomalous Carrier Profile and Etching Depth in β-Ga2O3 by Chlorine-Based Dry Etching

〇Takafumi Kamimura1, Masataka Higashiwaki1,2 (1.NICT, 2.Osaka Metropolitan Univ.)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[17p-Y1311-6]HCl gas etching characteristics on (011) β-Ga2O3

〇Takayoshi Oshima1, Yuichi Oshima1 (1.NIMS)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Highlighted Presentation

[17p-Y1311-7]Fabrication of air bridges on (100) β-Ga2O3 using crystallographic gas etching

〇Takayoshi Oshima1, Yuichi Oshima1 (1.NIMS)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[17p-Y1311-8]4" diameter β-Ga2O3 single crystal growth by the VB furnace with proper oxygen partial pressure

〇Yoshiki Kasai1, Tsuyoshi Kobayashi1, Toshimitsu Omiya1, Toshinori Taishi1, Keigo Hoshikawa1 (1.Shinshu Univ.)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[17p-Y1311-9]Killer Defects in (001) HVPE-Grown β-Ga2O3 Schottky Barrier Diodes Observed by Emission Microscope and SEM

〇Masanori Eguchi1, Yuto Otsubo2, Niloy Saha2, Rao Badari3, Chia-Hung Lin3, Kohei Sasaki3, Toshiyuki Oishi2, Makoto Kasu2 (1.Saga Univ. Syn., 2.Saga Univ., 3.Novel Crystal Tech.)
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