[17p-Y1311-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[17p-Y1311-2] Evaluation of electronic structure of Hf-based ferroelectric/β-Ga₂O₃ interface

〇Katsuhiro K Furukawa¹, Ryuto Ichikawa¹, Shodai Ata¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Metro. Univ.)

Keywords:

Ferroelectric,semiconductor,Wide Band Gap

In the MOS structure by stacking β-Ga₂O₃, which has a large band gap of 4.7-4.9 eV and is attracting attention as a next-generation power semiconductor, and Hf-based ferroelectrics, which exhibit ferroelectricity in ultra-thin films, it is thought that the band bending The deep acceptor of β-Ga₂O₃ may be activated by the huge polarization of Hf-based ferroelectrics. Furthermore, it is expected to be applied to brain-type power devices. In this article, we report the results of our analysis of the electronic structure of the ferroelectric/β-Ga₂O₃ interface through spectroscopic and electrical measurements.