[17p-Y1311-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[17p-Y1311-3] Nitrogen doping into β - Ga₂O₃ by RF Nitrogen plasma irradiations

〇(B)Shodai Ata¹, Ryuto Ichikawa¹, Furukawa Katsuhiro¹, Hisashi Soma¹, Takeshi Yoshimura¹, Takahiro Nagata², Yoshiyuki Yamashita², Masaaki Kobata³, Tatsuo Fukuda³, Norifumi Fujimura¹ (1.Osaka Metro. Univ., 2.NIMS, 3.JAEA)

Keywords:

Ga2O3,ALD