[17p-Y1311-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[17p-Y1311-5] Correlation Between Anomalous Carrier Profile and Etching Depth in β-Ga₂O₃ by Chlorine-Based Dry Etching

〇Takafumi Kamimura¹, Masataka Higashiwaki^1,2 (1.NICT, 2.Osaka Metropolitan Univ.)

Keywords:

Ga2O3,defect,MOS capacitor

MOS capacitors were fabricated on Si ion-implanted β-Ga₂O₃ (010) substrates after BCl₃ RIE treatments on the surface, and the correlation between the carrier depth profiles (N_d-N_a) and the BCl₃ RIE etching depth was investigated. As the etching depth increased, the N_d-N_a simply increased at the topmost layer, whereas it decreased and then increased at the 150 nm depth. These results suggest that the change in N_d-N_a near the surface is related to the penetration behavior of Cl and Ga vacancies into the β-Ga₂O₃ crystal.