[17p-Y1311-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[17p-Y1311-6] HCl gas etching characteristics on (011) β-Ga₂O₃

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)

Keywords:

Ga2O3,crystallographic etching,(011)