[17p-Y1311-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Highlighted Presentation

[17p-Y1311-7] Fabrication of air bridges on (100) β-Ga₂O₃ using crystallographic gas etching

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)

Keywords:

Ga2O3,crystallographic etching,(100)