Session Details

[11a-E308-1~8]17.1 Growth, Assembly, Structure control

Fri. Sep 11, 2026 9:00 AM - 11:00 AM JST
Fri. Sep 11, 2026 12:00 AM - 2:00 AM UTC
E308 (First Year Education Bld. E Block)

[11a-E308-1]Vertically Aligned Multilayer Graphene for Enhanced Battery Anode Performance

〇Kazushi Yabuki1, Koki Nozawa1, Takashi Suemasu1, Kaoru Toko1 (1.Tsukuba Univ.)

[11a-E308-2]Sputter Deposition of Graphene on Ni under Ar/H2 Atmosphere

〇Rion Kikuna1,2, Takeo Nakano1, Katsuhisa Murakami2, Masayoshi Nagao2, Hiromasa Murata2 (1.Seikei Univ., 2.AIST)

[11a-E308-3]Effect of Ozone Cleaning Pretreatment on Vapor–Solid Growth of Graphene
on h-BN Single Crystals

〇Haruki Yokoo2, Aoi Sasanuma2, Tomo Kawasaki1, Satoshi Kanda2, Fumitaka Sakamoto3, Yoshihiro Kobayashi3, Kenji Watanabe4, Taniguchi Takashi4, Ryota Negishi1,2,3 (1.Toyo Univ., 2.Graduate School of Toyo Univ., 3.BN Research Centre, 4.NIMS)

[11a-E308-4]Work Function Changes in Graphene on SiO2 Substrates Induced by Energy-Controlled Ar Plasma Treatment

〇Akito Fukuda1, Tadashi Abukawa2,1, Susumu Takabayashi3 (1.IMRAM Tohoku Univ., 2.SRIS Tohoku Univ., 3.NIT Ariake College)

[11a-E308-5]Honeycomb-like carbon layer commensurate with
(√(3)×√(3))R30^°-Si2N3/SiC(0001)

〇(D)Sukran Kutlu1, Anton Visikovskiy1, Jo Onoda2, Satoru Tanaka1,3 (1.Kyushu Univ., 2.Univ. Teacher Edu. Fukuoka, 3.Taiwan Tech.)

[11a-E308-6]Analysis of the Growth Mechanism of Graphene on Reduced Graphene Oxide Surfaces

〇Satoshi Kanda1, Shunji Kurosu2, Tatsuro Hanajiri1,2, Yuta Nishina3, Yoshihiro Kobayashi2, Ryota Negishi1,2 (1.Toyo Univ., 2.Bio-nanoelectronics Research Centre, 3.Okayama Univ.)

[11a-E308-7]Stability of oxidized germanene and its reduction by hydrogen

〇Seiya Suzuki1, Takahiro Ozawa2, Yasutaka Tsuda1, Tomo-o Terasawa1,2, Daiki Katsube3, Masahiro Yano1, Yukihiko Satou1, Akitaka Yoshigoe1 (1.JAEA, 2.IIS, Univ. of Tokyo, 3.JFCC)

[11a-E308-8]Oxygen-assisted CVD growth of a-axis-oriented α-MoO3 thin films

〇Yui Ogawa1, Yoshiharu Krockenberger1, Michal Gregus1, Makoto Kawano1, Masaki Kobayashi1, Shengnan Wang1, Yoshitaka Taniyasu1 (1.NTT BRL)