Presentation Information
[1B04]Hexagonal Boron Nitride for Next-Generation Semiconductor and Deep Ultraviolet Light Emitting Devices.
*Young Duck Kim1 (1. Department of Physics, Kyung Hee University, Seoul, South Korea)
Hexagonal boron nitride (hBN) is an atomically thin material with an ultrawide bandgap (> 6 eV), emerging as a key dielectric material for next generation two-dimensional (2D) heterostructure devices and quantum technologies. In addition to its exceptional insulating properties, hBN exhibits highly promising characteristics for efficient deep ultraviolet (DUV) light emission, including single photon emission and spin qubits from color centers in hBN. In this talk, I will present the ultrahigh breakdown electric field (> 50 MV/cm) with suppressed leakage current from carbon-doped hBN heterostructures, which enable the robust power electronics devices and ultra-low power consumption semiconductor devices. I also present the highly efficient deep UV electroluminescence from carbon color center in hBN. These results pave the way for the developments of next-generation semiconductor and deep UV optoelectronics.