Presentation Information
[1B05]Low dimensional nitride-based material system for neuromorphic computing
*Yi-Chia Chou1, Chang-Hsun Huang1, Chia-Yi Wu1 (1. National Taiwan University)
A nanowire memristor from the integration of complementary metal-oxide semiconductor circuits using compatible nitride-based electrodes is presented. We regulate the morphology and surface states with the memristive switching behavior. Thus, our study demonstrates the realization of self-assembled GaN nanowire devices, which is promising for application in the 1D-1D system downsizing required for the brain-inspired neuromorphic computing.