Presentation Information
[1P01]Protection of atomically thin flat metal layers on Si(111) substrate against thermal destruction by TCNQ adsorption
*Takayuki Suzuki1, Kazuma Yagyu1 (1. Fukuoka University)
We conducted an experiment to increase the Si substrate temperature after the TCNQ adsorption onto both the quasi-5.5×5.5 and the √7×√3-rect surfaces at approximately 150 K. Then, it was found that the quasi-5.5×5.5 structure was protected by the TCNQ molecules up to approximately 150°C, while the defect regions filled with the molecules are significantly increased on the √7×√3-rect surface. This is considered because the TCNQ molecules attach to the step edges at the boundary between the quasi-5.5×5.5 and the √7×√3-rect structures, which prevents the indium atoms from detaching from the quasi-5.5×5.5 structure during the heating. It was also found that the quasi-5.5×5.5 periodicity is not only present on the outermost surface, but also on the second layer below it. The unit lengths of SMONs with a windmill-like motif formed on the quasi-5.5×5.5 domains are determined to be about 1.2 nm and 1.5 nm with the angle between them being about 100 °.