Presentation Information
[1P10]Electronic structure and stability of thin indium films on Si(111)
*shinichiro hatta1, tomoka murata1, mahiro yamashita1, hiroshi okuyama1 (1. Graduate School of Science, Kyoto university)
We have investigated the electronic structure of indium films grown on the Si(111)-(√7×√3) superstructure at low tempratures below 100 K. Above 4 monolayers (ML), the films have a (√3×√3) lattice, which is consistent with an In(111)-(2×2) structure. ARPES measurements showed that the QWS energies shift downward with increasing thickness and are well described by a phase accumulation model. While the QWSs cross the Fermi level near 5, 8, and 11 ML, enhanced film stability was observed at 5, 9, and 13 ML. At these stable thicknesses, the heavy-hole (HH) state in the Si space charge layer exhibits relatively lower energies. The thickness dependence of the HH states indicates electronic coupling with the QWSs. These findings suggest the important role of the substrate electronic states in determining film stability.