Presentation Information
[1P16]Fe intercalation into graphene on SiC(0001) substrates
*Taiki Kaga1, Koichi Takemura1, Tatsuki Katano1, Kento Ozeki1, Takushi Imori2, Fumio Komori1, Kenichi Ozawa3, Kazuhiko Mase3, Hiroyuki Hirayama4, Kan Nakatsuji1 (1. Department of Materials Science and Engineering, School of Materials and Chemical Technology, Institute of Science Tokyo, 2. Institute for Solid State Physics, The University of Tokyo, 3. Institute of Materials Structure Science, High Energy Accelerator Research Organization, 4. Department of Physics, School of Science, Institute of Science Tokyo)
In this study, we have attempted Fe intercalation into monolayer graphene fabricated on 4H-SiC(0001) substrates. Typical condition for the intercalation was to deposit 4 monolayers (ML) of Fe at room temperature followed by annealing at 823-873 K for 60 min. Fe intercalation into the interface is supported by LEED patterns and Raman spectra. Judging from the energy shifts of the G and 2D peaks, compressive stress of graphene is relaxed. XPS and ARPES measurements revealed that the Fe silicide forms beneath graphene and the graphene π band becomes blurred with Dirac energy shift toward the Fermi level after the Fe intercalation. The broadening of the band indicates the increase in defect density and/or the number of graphene layers while a well-defined bilayer is not formed. Based on these observations, we will discuss the atomic structures and electronic states after the Fe intercalation not only into the monolayer graphene but also into the buffer layer.