Presentation Information
[1P27]Study of spin transport properties at the Rashba interface of Bi
*Shunji Ito1, Minoru Goto2, Akari Takayama1,3 (1. Department of pure and applied Physics, Waseda University, 2. Tokyo University of science, 3. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University)
Recently, a nonlinear Hall effect has been observed at the Rashba interface, and the origin of this effect is being actively studied from fundamental viewpoints. We are particularly interested in the nonlinear Hall effect in Bi, which exhibits electronic states that deviate from the conventional Rashba effect; it shows anisotropic in-plane spin polarization and the presence of out-of-plane spin components.
In this study, we aimed to clarify the spin transport properties arising from the anomalous Rashba surface electronic states of Bi by measuring the dependence of the AC Hall voltage on the in-plane angle of an applied magnetic field. The results of the experiment demonstrated not only the angle dependence of the hole voltage predicted by the Rashba effect, but also a distinct voltage drop at specific angles. In this presentation, we will discuss the NLHE related to the Rashba effect in Bi.
In this study, we aimed to clarify the spin transport properties arising from the anomalous Rashba surface electronic states of Bi by measuring the dependence of the AC Hall voltage on the in-plane angle of an applied magnetic field. The results of the experiment demonstrated not only the angle dependence of the hole voltage predicted by the Rashba effect, but also a distinct voltage drop at specific angles. In this presentation, we will discuss the NLHE related to the Rashba effect in Bi.